منابع مشابه
Anisotropic exchange interactions in III-V diluted magnetic semiconductors
The RKKY interaction between substitutional Mn local moments in GaAs is both spin-direction dependent and spatially anisotropic. In this paper we address the strength of these anisotropies using a semiphenomenological tight-binding model that treats the hybridization between Mn d-orbitals and As p-orbitals perturbatively and accounts realistically for its nonlocality. We show that valence-band ...
متن کاملX-ray magnetic dichroism in the III-V diluted magnetic semiconductors
Diluted magnetic semiconductors (DMSs) are semiconductors alloyed with magnetic elements [1]. The physical properties of these materials can be tuned by both charge and spin, thus, they have great potential of being used in a wide variety of spintronic applications, such as magneto-optical, magneto-electrical, and magneto-transport devices. Spintronics (spin+electronics) is the technology that ...
متن کاملANALYSIS OF SOME MAGNETIC PROPERTIES OF DILUTED MAGNETIC SEMICONDUCTORS
The susceptibility and specific heat experimental results of the diluted magnetic semiconductors (DMS) are incorporated in a model based on short-range as well as long-range interaction in a random may of magnetic ions. The so-called nearestneighbor pair approximation (NNPA) is applied. It appears that the calculated values of zero field specific heat and Curie-Weiss temperature based on th...
متن کاملMagnetic domains in III-V magnetic semiconductors
Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W51.1 mm for Ga0.957Mn0.043As/In0.16Ga0.84...
متن کاملAb initio study of Curie temperatures of diluted III - V magnetic semiconductors
The electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders are treated using the coherent potential approximation. A ground state with partial disorder in the local moments and with a reduced total magnetic moment appe...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2000
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.98.203